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| SMD Type HEXFET Power MOSFET KRF9640S TO-263 Features Surface Mount Available in Tape & Reel Dynamic dv/dt Rating + .2 8 .7 -00.2 + .1 1 .2 7 -00.1 Transistors IC Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 + .2 5 .2 8 -00.2 2.54 +0.2 -0.2 +0.1 5.08-0.1 + .2 2 .5 4 -00.2 + .2 1 5 .2 5 -00.2 2.54 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ -10V,Tc = 25 Continuous Drain Current, VGS @ -10V,Tc = 100 Pulsed Drain Current*1 Power Dissipation Tc = 25 Power Dissipation (PCB Mount) Ta = 25 Linear Derating Factor Linear Derating Factor (PCB Mount) *3 Gate-to-Source Voltage Single Pulse Avalanche Energy *4 Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Operating Junction and Storage Temperature Range Junction-to-Case Junction-to-Ambient ( PCB Mounted) *3 Junction-to-Ambient VGS EAS IAR EAR dv/dt TJ,TSTG R R R JC JA JA Symbol ID ID IDM PD *3 Rating -11 -6.8 -44 125 3 1 0.025 20 700 -11 13 -5 -55 to + 150 1 40 62 Unit A W W/ V mJ A mJ V/ns /W /W /W *1Repetitive rating; pulse width limited by max. junction temperature. *2 ISD -11A, di/dt 150A/ s, VDD V(BR)DSS,TJ 150 * 3 When mounted on 1" square PCB *4 VDD=-50V,startin TJ=25 ,L=8.7mH,RG=25 ,IAS=-11A 5 .6 0 1 gate 1 Gate 2 drain 2 Drain 3 source 3 Source www.kexin.com.cn 1 SMD Type KRF9640S Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Intermal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time *1 Pulse width 300 s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss IS ISM VSD trr Qrr ton TJ = 25 , IS = -1.1A, VGS = 0V*1 TJ = 25 , IF = -1.1A di/dt = 100A/ s*1 VGS = 0V VDS = -25V f = 1.0MHz Symbol V(BR)DSS V(BR)DSS/ Transistors IC Testconditons VGS = 0V, ID =- 250 A TJ ID = -1mA,Reference to 25 VGS = -10V, ID = -6.6A*1 VDS = VGS, ID = -250 A VDS = -50V, ID = -6.6A*1 VDS = -200V, VGS = 0V VDS = -160V, VGS = 0V, TJ = 125 Min -200 Typ Max Unit V -0.20 0.5 -2.0 4.1 -100 -500 -100 100 44 7.1 27 14 43 39 38 4.5 -4.0 V/ RDS(on) VGS(th) gfs IDSS V S A IGSS VGS = 20V VGS = -20V ID = -11A VDS = -160V VGS = -10V,*1 VDD = -100V ID = -11A RG =9.1 RD =8.6 *1 nA nC ns nH 7.5 1200 370 81 -11 A Body Diode) *2 -44 -5.0 250 2.9 300 3.6 V ns C pF Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) *2 Repetitive rating; pulse width limited bymax 2 www.kexin.com.cn |
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